Are you satisfied with your mobile charger? If the answer is no, then you have enough reason to pay attention to a noun named Gan. As far as the current situation is concerned, chargers made of Gan materials can not only achieve smaller volume, lighter weight, but also bring higher charging efficiency - in short, it will bring a revolution to chargers.
More importantly, GaN has attracted extensive industry attention.
What is Gan?
Gan is essentially a new semiconductor material.
Its Chinese name is gallium nitride, its English name is gallium nitride, and its molecular formula is Gan. It is a compound of nitrogen and gallium, a direct band gap semiconductor, and a wide band gap semiconductor material.
The structure of Gan Gan nitride is similar to wurtzite, and its hardness is very high. Compared with traditional silicon-based semiconductors, Gan Gan Gan nitride has better breakdown ability, higher electron density and mobility, and higher working temperature (melting point is about 1700 ℃).
As a new material, GaN has wide direct band gap, strong atomic bond, high thermal conductivity, good chemical stability (almost no acid corrosion) and strong radiation resistance. It has a broad prospect in the application of optoelectronics, high-temperature high-power devices and high-frequency microwave devices.
From the perspective of semiconductor industry, GaN material is a new semiconductor material for the development of microelectronic devices and optoelectronic devices. Together with SiC, diamond and other semiconductor materials, GaN material is known as the third generation semiconductor material after the first generation of Ge, Si semiconductor material, the second generation of GaAs, InP compound semiconductor material.
Compared with traditional silicon-based semiconductors, Gan can provide significant advantages to support power applications, including obtaining more energy-saving benefits at higher power, resulting in a significant reduction in parasitic power consumption; Gan materials also allow more streamlined component design to support smaller size appearance.
In addition, compared with silicon-based components, Gan components can switch at up to 10 times faster and operate at a higher maximum temperature. These powerful material characteristics make Gan widely applicable to industries ranging from 100V to 650V, including automobile, industry, telecommunications, and specific consumer electronic applications.
At present, the research and application of Gan materials has become the forefront and hotspot of semiconductor research in the world.
Gan leads to charger revolution
In fact, GaN has been in use since the 1990s - in recent years, it has again attracted the attention of ordinary consumers because of chargers.
In fact, due to the wide band gap, high thermal conductivity, high temperature resistance and other characteristics, the most intuitive feeling of the charger using Gan Gan Gan element is that it is small in size and light in weight, which well conforms to the trend of electronic products towards miniaturization and thinness.
From the specific effect, under the same output power, the charger with Gan power MOS will be more than 1 / 3 smaller than the traditional charger, and has greater advantages in heat generation and efficiency conversion compared with the ordinary charger, greatly improving the user experience.
Of course, due to the limitation of the development of technology itself, the cost of Gan charger has been relatively high; however, with the increasing demand and expectation for charging technology, the chargers using Gan materials have gradually entered the consumption field.
In October 2018, Anker released the world's first USB PD Gan charger, powerport atom PD1, andAppleThe 5W charger is about the same size, but it can output up to 27W power, attracting the eyes.
This Gan charger can evenMacBookCharge.
Subsequently, Anker, ravpower, aukey, elixage, Mu one, uibi and other manufacturers all launched their own USB PD Gan chargers, with the price more than 150 yuan.
It is worth noting that in addition to manufacturers specializing in charging heads, many consumer electronics manufacturers also focus on GaN charging technology.
Samsung, apple and other big factories are also laying out Gan
As far as the current situation is concerned, there are many manufacturers of Gan layout.
Among them, Xiaomi's Gan charger released last week uses nv6115 and nv6117 ganfast power IC from Navitas, with a volume of 56.3 x 30.8 x 30.8mm, which is officially half of the standard adapter size.
It is worth mentioning that nano micro semiconductor company is the first Gan power IC company in the world. It was founded in El Segundo, California, USA in 2014. Xiaomi also established the upstream and downstream cooperation of the industrial chain by investing in nano micro semiconductor company.
In terms of the whole consumer electronics industry, Gan is also accompanied by the rapid explosion of chargers.
According to the report of charging head network, in January 2020, at CES exhibition held in the United States, 66 Gan chargers have participated in the exhibition, including 18W, 30W, 65W, 100W and other power, as well as a new category of super docking station, to meet the all-round charging needs of mobile phones, tablets, and laptops.
According to the report from CITIC Securities, with the increasing demand of users for the universality and portability of chargers, the market scale of Gan fast charging will increase rapidly in the future. It is estimated that the global market scale of Gan chargers will be 2.3 billion yuan in 2020 and 63.8 billion yuan in 2025, with a compound annual growth rate of 94% in five years.
At the same time, Gan is expected to become the mainstream choice of fast charging devices in the field of consumer electronics in the future in terms of comprehensive performance and cost.
Market scale breaks out, semiconductor industry enters Gan
It should be noted that Gan can not only be used in charger field.
In fact, with the power performance, frequency performance and excellent heat dissipation performance of Gan, it can also be used in 5g base station, automatic driving, military radar and many other occasions with high power and frequency requirements.
Under such demand, the GaN substrate market is also expanding.
According to the statistics of yole development, a French market research consultant, in 2017, the global GaN substrate market demand is about 74000 pieces. Driven by the application of Gan RF and power devices, it is estimated that the global GaN substrate demand will rise to 320000 pieces in 2022, corresponding to the market size of gallium nitride substrate reaching 6.4 billion yuan, with a compound annual growth rate of 34% from 2017 to 2022.
It is worth mentioning that in such a market trend, some important semiconductor industries have also entered the Gan market.
On February 20, TSMC and STMC announced that they would cooperate to accelerate the development of Gan process technology, and introduce separate and integrated Gan components to the market. Through this cooperation, STMC will use the Gan process technology of TMC to produce its Gan products.
Regarding this cooperation, Dr. Zhang Xiaoqiang, deputy general manager of TSMC business development, said that he expects to cooperate with Italian French semiconductor to bring Gan power electronics application into industrial and automotive power conversion. Specifically, Gan is able to assist STM in providing solutions for medium and high power applications, including converters and chargers for hybrid vehicles.
It can be seen that the focus of both sides is actually on the electrification of cars.
When a new material and new technology moves from laboratory to consumer, it needs to integrate various factors, such as upstream capacity and yield, midstream R & D, manufacturing and ecological chain improvement, as well as downstream manufacturers and consumers' cognition and acceptance, and of course, whether the selling price is pro people. From the current industry situation, Gan We are ready to enter the mass charging market.